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filingDate 2016-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationNumber US-9478417-B2
titleOfInvention Method of manufacturing semiconductor device for forming film including at least two different elements
abstract Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
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