| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2015-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_159b2d9e52106057be0659fe1357c924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6b6a6885bc6e86218b2cb7de179a432
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c2d466ad3be4b2700ae1f17bbb73270
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24f2a98ecd31e6544ee5b1974de5c218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_100bea405feb0f1b254205de79b4b918
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f08b0ee57da2fc8885f52c176617990e |
| publicationDate |
2016-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9472504-B2 |
| titleOfInvention |
Semiconductor having a high aspect ratio via |
| abstract |
The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer. |
| priorityDate |
2010-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |