| abstract |
A semiconductor chip includes an electrode pad on a substrate, a barrier metal layer on the electrode pad, a bump electrode, a first protection layer formed on the substrate, and a second protection layer having an opening. The first protection layer overlaps part of the electrode pad. The second protection layer covers a region over the first protection layer and a region over the electrode pad. The upper surface of the second protection layer has an arc surface. The thickness between the arc surface and the electrode pad as seen in a sectional view is gradually large from the rim of the opening to the rim of the electrode pad. The rate of change of the thickness is higher at the rim of the opening than at the rim of the electrode pad. |