| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-467 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| filingDate |
2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf1e2489a2534f549a1da7ac020c881a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14730d9c22e20c88780bac87deff61a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efdefc64a6dbf8fe3b07312cc8c01187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_696eaac3fb0cc12872dcccc17d871819 |
| publicationDate |
2016-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9460963-B2 |
| titleOfInvention |
Self-aligned contacts and methods of fabrication |
| abstract |
Embodiments of the present invention provide an improved contact and method of fabrication. A dielectric layer is formed over transistor structures which include gates and source/drain regions. A first etch, which may be a reactive ion etch, is used to partially recess the dielectric layer. A second etch is then used to continue the etch of the dielectric layer to form a cavity adjacent to the gate spacers. The second etch is highly selective to the spacer material, which prevents damage to the spacers during the exposure (opening) of the source/drain regions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840139-B2 |
| priorityDate |
2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |