http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9452920-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e6ddf53a7a8db01a5314268a2c323b9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-098 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00269 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0064 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate | 2015-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_098ae76438ef0500447583e7330140bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cee09d713b03e9a393332e7542c99149 |
| publicationDate | 2016-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9452920-B2 |
| titleOfInvention | Microelectromechanical system device with internal direct electric coupling |
| abstract | A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises providing a MEMS substrate which includes forming one or more cavities in a first semiconductor layer; forming a second semiconductor layer; and providing a dielectric layer between the first semiconductor layer and the second semiconductor layer The MEMS substrate providing step further includes bonding the first semiconductor layer to a second semiconductor layer; etching at least one via through the second semiconductor layer and the dielectric layer; and depositing a first conductive material onto the second semiconductor layer surface and filling the at least one via. The MEMS substrate providing step also includes depositing a second conductive material on top of the first conductive material; etching the second conductive material and the first conductive material to form at least one stand-off; the second semiconductor layer to define one or more MEMS structures; and the first semiconductor layer to create an opening to separate the first semiconductor layer into a first portion and a second portion. The method further comprises bonding the MEMS substrate to a base substrate using a eutectic bond between the second conductive material and metal pads of the base substrate. |
| priorityDate | 2013-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.