| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-552
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-552 |
| filingDate |
2015-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84de81fb3abb69be04e089e04360f9b9 |
| publicationDate |
2016-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9449926-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
In a back surface hole injection type diode, by more effectively securing the effect of hole injection from the back surface of a semiconductor substrate, the performance of a semiconductor device is improved. In the semiconductor device, in a diode formed of a P-N junction including an anode P-type layer formed in the main surface of a semiconductor substrate and a back surface N + -type layer formed in the back surface of the semiconductor substrate, a back surface P + -type layer is formed in the back surface, and a surface P + -type layer is formed in the main surface right above the back surface P + -type layer to thereby promote the effect of hole injection from the back surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017263785-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017317075-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510904-B2 |
| priorityDate |
2014-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |