Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02334 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66818 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76892 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9555c89851044f8391d39dc6bcf97805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_336eead9b1ab5e068b044c0726bd03ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6b8951d5a5598673048ce429d4bbb5 |
publicationDate |
2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9443724-B2 |
titleOfInvention |
Modification processing method and method of manufacturing semiconductor device |
abstract |
A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas. |
priorityDate |
2014-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |