| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_307234ae385912435eb053c778e1c0ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8306c43450b63b91ab197b1749cefa11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0f89b7e373bce13f9e8ef9d22da98221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_acb03de418c37c4425aaed89427fcb95 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2013-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_813644d050bf0398602692dad45dea39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ab95d6c52c9d5780a0bb2c4ee6a5b17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15f6bed86184761591987734d2ac5ee5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54302ba11addd53fbf14386df23ed05d |
| publicationDate |
2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9431477-B2 |
| titleOfInvention |
Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
| abstract |
A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011374-B2 |
| priorityDate |
2009-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |