| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_986d0ab29fa7910a46cd21a12d682fe4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D7-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N97-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-008 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
| filingDate |
2012-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a96d00e4b7e7e8e8907e2aabd5ec3dc |
| publicationDate |
2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9431474-B2 |
| titleOfInvention |
Metal-insulator-metal stack and method for manufacturing the same |
| abstract |
A method for manufacturing a metal-insulator-metal (MIM) stack is described. The method includes forming a temporary stack by depositing a bottom electrode comprising at least one metal layer; depositing a dielectric comprising at least one layer of a dielectric material having a first dielectric constant value; and depositing a top electrode comprising at least one metal layer. The step of depositing the bottom and/or top electrode includes depositing a non-conductive metal oxide layer directly in contact with the dielectric; and after the step of depositing the bottom and/or top electrode's non-conductive metal oxide layer and the dielectric, subjecting the temporary stack to a stimulus, which transforms the non-conductive metal oxide into a thermodynamically stable oxide having conductive properties or into a metal, and the dielectric material into a crystalline form having a second dielectric constant value higher than the first dielectric constant value, thereby creating the final MIM stack. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11233118-B2 |
| priorityDate |
2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |