| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_04b3c936912e63b452436473fa758a46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e47f66a7aa605e563899e2da9da4616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0efae9bfd49656818488aea119e5f39 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G33-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G23-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-093 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N2-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G33-00 |
| filingDate |
2010-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_455ead6f6de08fd299e91fe7881c34f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d175808b3663738c1f808ae461a3ab7 |
| publicationDate |
2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9431242-B2 |
| titleOfInvention |
PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film |
| abstract |
To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO 3 , wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb 2+ as A-site ions and containing Zr 4+ and Ti 4+ as B-site ions, and the A-site contains Bi 3+ as A-site compensation ions and the B-site contains Nb 5+ as B-site compensation ions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11121139-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018240962-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9966527-B2 |
| priorityDate |
2010-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |