| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f85f11ebc0c226c8c2e3dfdbd87f7d62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb63610798778c2d65df275b5810fd1d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2203-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2201-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J49-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N15-0893
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N15-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-00 |
| filingDate |
2012-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5af50aa0dd329b5a24bd77bf9caf1a81 |
| publicationDate |
2016-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9423447-B2 |
| titleOfInvention |
Measurement apparatus and method |
| abstract |
A method and apparatus for extracting the contents ( 39 ) of voids ( 13 ) and/or pores present in a semiconductor device to obtain information indicative of the nature of the voids and/or pores, e.g. to assist with metrology measurements. The method includes heating the semiconductor wafer to expel the contents of the voids and/or pores, collecting the expelled material ( 41 ) in a collector, and measuring a consequential change in mass of the semiconductor wafer ( 29 ) and/or the collector ( 37 ), to extract information indicative of the nature of the voids. This information may include information relating to the distribution of the voids and/or pores, and/or the sizes of the voids and/or pores, and/or the chemical contents of the voids and/or pores. The collector may include a condenser having a temperature-controlled surface (e.g. in thermal communication with a refrigeration unit) for condensing the expelled material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014230-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017069554-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10794816-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9976902-B1 |
| priorityDate |
2011-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |