Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_20f12ab58e48cba76595b376f1a15326 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N19-101 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01J5-0853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01J5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-04 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-32 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232 |
filingDate |
2014-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb7d3d76a14aa530a453535a8eeeb8dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea87c1dc169df9ff2cc75f0b58e8e311 |
publicationDate |
2016-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9412927-B2 |
titleOfInvention |
Formation of a thermopile sensor utilizing CMOS fabrication techniques |
abstract |
Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016282194-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9917242-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10876903-B2 |
priorityDate |
2014-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |