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filingDate 2014-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9412927-B2
titleOfInvention Formation of a thermopile sensor utilizing CMOS fabrication techniques
abstract Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic.
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