| abstract |
In one aspect, methods of forming smooth ternary metal nitride films, such as Ti x W y N z films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl 4 and NH 3 , and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF 6 and Si 2 H 6 . The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties. |