| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0424
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-173 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-227 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate |
2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6147e5dfd3b721ca7f0cf5a6c0280cb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebe0ebc5020abca43b66242ac419e7a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fe8e766b16369e6615572dd2537c54e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e942499cdd3cf9ca3c5e1547c6583d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74bb981ea1d08731e68abe871800725c |
| publicationDate |
2016-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9401583-B1 |
| titleOfInvention |
Laser structure on silicon using aspect ratio trapping growth |
| abstract |
A method of forming a laser on silicon using aspect ratio trapping (ART) growth. The method may include; forming a first insulator layer on a substrate; etching a trench in the first insulator layer exposing a top surface of the substrate; forming a buffer layer in the trench using ART growth; forming a laser on the buffer layer, the laser includes at least an active region and a top cladding layer; and forming a top contact on the top cladding layer and a bottom contact on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020245866-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11698488-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3075461-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3503223-A1 |
| priorityDate |
2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |