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filingDate 2014-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9401362-B2
titleOfInvention Multiple threshold voltage semiconductor device
abstract In one aspect there is set forth herein a semiconductor device having a first field effect transistor formed in a substrate structure, a second field effect transistor formed in the substrate structure, and a third field effect transistor formed in the substrate structure. The first field effect transistor can include a first gate stack configuration, and a first threshold voltage. The second field effect transistor can include a second gate stack configuration, and a second threshold voltage. The third field effect transistor can include a third gate stack configuration, and a third threshold voltage.
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