| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-148 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2014-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99fa88124af7a66edbcbbeb89d13c21e |
| publicationDate |
2016-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9397140-B2 |
| titleOfInvention |
Method of manufacturing semiconductor device |
| abstract |
A method of manufacturing a semiconductor device includes forming a stack of films including a conductive film layer above a semiconductor substrate; patterning the stack of films by dry etching; and cleaning including generation of plasma in an ambient including BCl 3 and controlling a bias power to a nonbiased state. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495292-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971225-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10410717-B2 |
| priorityDate |
2013-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |