http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9385184-B2

Outgoing Links

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filingDate 2014-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5df218e8e18dce4d5f7e78a289c055fd
publicationDate 2016-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9385184-B2
titleOfInvention Active device and semiconductor device with the same
abstract A semiconductor device is provided, comprising a substrate; a first well having a first conductive type and extending down from a surface of the substrate; a diffusion region doped with impurity of the first conductive type and extending down from a surface of the first well; and a plurality of active devices formed within the diffusion region, and the active devices arranged separately from each other. The active devices are electrically isolated from each other by the diffusion region. The active device is self-isolated by a conductive guarding structure, and the semiconductor device comprising embodied STI-free active devices solves STI edge issues.
priorityDate 2014-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 23.