| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78f36760f2f40adf04ac588c8e4eb164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d272419ee5f74602aa9664ff5b1dfa8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4beb5ee0ed4fd17822a559ddd9c4536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d40fffef591d441896759b693bf027f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7aaa94fc712b333a3b0b705bcc6173c6 |
| publicationDate |
2016-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9385003-B1 |
| titleOfInvention |
Residue free systems and methods for isotropically etching silicon in tight spaces |
| abstract |
Systems and methods for etching a substrate include arranging a substrate including a first structure and a dummy structure in a processing chamber. The first structure is made of a material selected from a group consisting of silicon dioxide and silicon nitride. The dummy structure is made of silicon. Carrier gas is supplied to the processing chamber. Nitrogen trifluoride and molecular hydrogen gas are supplied to the processing chamber. Plasma is generated in the processing chamber. The dummy structure is etched. |
| priorityDate |
2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |