| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcff13f8573db698307f919e6385d5c4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-521 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C59-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B29C59-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-467 |
| filingDate |
2015-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99e4d8f8c21265c04bd2d583a116da03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c57602e68ebd2f681182dd078dea1cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb6a870e83617553f77cda432333e50f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a5e801bf668ed6d0afc323de93a61ef |
| publicationDate |
2016-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9373742-B2 |
| titleOfInvention |
Plasma-assisted techniques for fabricating semiconductor devices |
| abstract |
Plasma-assisted techniques are provided for fabricating semiconductor devices. In one aspect, a plasma is applied to a substrate before exfoliating layers of a multi-layer structure of atomically thin two-dimensional sheets onto the substrate. The exfoliated layers serve as the basis for constructing a semiconductor device. In another aspect, a p-n junction is formed by applying a plasma to top layers of a multi-layer structure of atomically thin two-dimensional sheets and then exfoliating a portion of the multi-layer structure onto a bottom electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10809448-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106549064-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106549064-B |
| priorityDate |
2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |