http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9372223-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27bccfea336a7262f9f214d856c425c5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4672c37e5fe348507c74ea96ff54a297 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2632 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2012-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88e3a1efc40d4668dc7ee78759fc1710 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74d37188520272c27d3f866a4fb88885 |
| publicationDate | 2016-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9372223-B2 |
| titleOfInvention | Method of evaluating metal contamination in semiconductor sample and method of manufacturing semiconductor substrate |
| abstract | An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor sample by DLTS method, which includes obtaining a first DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal being generated by alternatively and cyclically applying to a semiconductor junction on a semiconductor sample a reverse voltage V R to form a depletion layer and a weak voltage V 1 to trap carriers in the depletion layer; obtaining a second DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal is being generated by cyclically applying the V R to the semiconductor junction; obtaining a differential spectrum of the first DLTS spectrum with a correction-use spectrum in the form of the second DLTS spectrum or a spectrum that is obtained by approximating the second DLTS spectrum as a straight line or as a curve. |
| priorityDate | 2011-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.