| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_acb2f5e757d4f56b665ed2664ee2503d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2bbafa2260cfc6f1a1a788f456d93b79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_65d8e86431f68703bdfee82ccf958ac6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d00b882556c44a533c9926fcbde0983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4bdeeb412d02662fb9ba7aaf8d520467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f59f714e4358df203f7ebf08d70455c9 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| filingDate |
2013-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6985cb979d8fa3a74c0797555be4a008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d0d2ee3459a1c9b704bf407758ae49d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90c9d050cd134d1ef3155c645f8fc144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6468bdaf4d56a0ece4782d062da230ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f669be2f40cd544f1c9d465d33586dd4 |
| publicationDate |
2016-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9362413-B2 |
| titleOfInvention |
MOTFT with un-patterned etch-stop |
| abstract |
A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11062942-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10699953-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10892183-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11164938-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593594-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600688-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10930503-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437274-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741435-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840186-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705366-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11037825-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553485-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510602-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770349-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10410921-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10636659-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10892187-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10424507-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10319636-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10790191-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10699952-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573555-B2 |
| priorityDate |
2013-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |