Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6206e07b7f21898508847eaed11c98c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3ebec553470c9203d4576258e4a81b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d9371c6a0039efc8de8c3bf3acbc768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fa09c3bcd929e9f0f0b3d33021384f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00ce9d5a55c9464556bba6a4f12c24f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f53894397847d4e3d65836645291ec71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d66501f4d30a4a077676af606e9315a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b590dee703d282e8b5ea340ee12aa9c2 |
publicationDate |
2016-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9362124-B2 |
titleOfInvention |
Method of patterning a metal gate of semiconductor device |
abstract |
Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process. |
priorityDate |
2008-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |