| abstract |
In embodiments of the present invention improved capabilities are described for RFID tags with hardened memory, where the memory comprises a plurality of one time programmable (OTP) non-volatile memory locations for storing data, wherein the plurality of OTP non-volatile memory locations are configured to emulate a hardened memory system that retains data stored in the plurality of OTP non-volatile memory locations, wherein the data stored is retained after exposure of the RFID tag to an ionizing radiation exposure with an exposure level equal to or greater than 25 kGy, wherein the plurality of OTP non-volatile memory locations are configured to emulate at least one multiple time programmable (MTP) memory location for storing the data. |