| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82a9e22a923eca64a02a97f0dfb493ed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2014-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b20f2473b4cd1e2f31e18a5e0b9a5748
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90b1c74065cef05dea90ca8e7b2b96ef |
| publicationDate |
2016-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9355904-B2 |
| titleOfInvention |
Method for strain-relieved through substrate vias |
| abstract |
A semiconductor die including strain relief for through substrate vias (TSVs). A method for strain relief of TSVs includes defining a through substrate via cavity in a substrate. The method also includes depositing an isolation layer in the cavity. The method further includes filling the cavity with a conductive material. The method also includes removing a portion of the isolation layer to create a recessed portion. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10867908-B2 |
| priorityDate |
2012-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |