Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e33b0ba9a64f96e2a1c19e16ffe4e35e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e6a632eb601870d90fb8e87b5e6373f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb0501d1f8ed28a94ea15e8735159e05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7526289ecbfbf74c745c9ed39799d3a6 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3411 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3163 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32816 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-31 |
filingDate |
2012-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b61462bf2899e39071db949a7ddc275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd7851522666d64556c83351884c7945 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbff000b8583ff7bf17a280c7db9505e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab679d2320beb8e55342df7d0e6dd43a |
publicationDate |
2016-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9349395-B2 |
titleOfInvention |
System and method for differential etching |
abstract |
A method according to one embodiment includes placing a substrate in a chamber; and plasma sputtering the substrate in a presence of a non-zero pressure of a vapor, wherein the vapor at the non-zero pressure is effective to diminish an etch rate of a first material of the substrate. A plasma sputtering apparatus according to one embodiment includes a chamber; a reservoir in the chamber for releasing a vapor at an established rate; a mount for a substrate; and a plasma source. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016240355-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170139-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9472213-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9966237-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9886972-B2 |
priorityDate |
2012-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |