| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a0eda0cdefb178c870ae3ce4d76b894 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M2008-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-8803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45555
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-925
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M8-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-92 |
| filingDate |
2013-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a362264cec665fcf95912073620145cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ae59d6786bdd719c9ee1cd64b16a9dc |
| publicationDate |
2016-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9343749-B2 |
| titleOfInvention |
Ultrathin platinum films |
| abstract |
In at least one embodiment, a method of forming a platinum thin film is provided, including performing a first atomic layer deposition (ALD) process on a substrate using a first platinum organometallic precursor in a first step and an oxidizing precursor in a second step to form an at least partially coated substrate. A second ALD process is then performed on the at least partially coated substrate using a second platinum organometallic precursor in a first step and a reducing precursor in a second step to form a thin film of platinum on the substrate. The first ALD process may be performed for 5 to 150 cycles to nucleate platinum on the substrate surface and the second ALD process may be performed thereafter to grow the thin film and remove surface oxides. A conformal platinum thin film having a thickness of 1 to 10 monolayers may be deposited. |
| priorityDate |
2013-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |