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filingDate 2013-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_409d220d57fb8a890a24000946a7fe42
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publicationDate 2016-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9343207-B2
titleOfInvention Resistance change device, and method for producing same
abstract To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3 , an upper electrode layer 6 , a first metal oxide layer 51 , a second metal oxide layer 52 , and a current limiting layer 4 . The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6 , and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6 , and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51 , and has a third resistivity higher than the first resistivity and lower than the second resistivity.
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