| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb68097a7397e9e28e05de7be758d66e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0264 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L19-143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00269
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L19-0084 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02 |
| filingDate |
2014-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea903b665f92d9152e236451169ed47d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bceee5ed8e6f9f3d89df5f70022a2fe |
| publicationDate |
2016-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9340414-B2 |
| titleOfInvention |
Method and structure of monolithically integrated absolute pressure sensor |
| abstract |
An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11047753-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017334709-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11287486-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11674803-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11579033-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9896327-B2 |
| priorityDate |
2009-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |