| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-153
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0066 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 |
| filingDate |
2012-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02259d1af6402c8f233bf1628a9ab747
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2cefc2da8d8d060f410f004721afb09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62651d0b6ecfae02523a3886c81bebf1 |
| publicationDate |
2016-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9337377-B2 |
| titleOfInvention |
Methods of forming dilute nitride materials for use in photoactive devices and related structures |
| abstract |
Atomic layer deposition (ALD) or ALD-like deposition processes are used to fabricate dilute nitride III-V semiconductor materials. A first composition of process gases may be caused to flow into a deposition chamber, and a group V element other than nitrogen and one or more group III elements may be adsorbed over the substrate (in atomic or molecular form). Afterward, a second composition of process gases may be caused to flow into the deposition chamber, and N and one or more group III elements may be adsorbed over the substrate in the deposition chamber. An epitaxial layer of dilute nitride III-V semiconductor material may be formed over the substrate in the deposition chamber from the sequentially adsorbed elements. |
| priorityDate |
2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |