| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2013-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ef075b4f124a0909fb07b0105a6181c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27b476e8e0dd586e26489ff5f6ff63fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20e769a8bc60d246e3a49e7cfabc0e86 |
| publicationDate |
2016-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9337177-B2 |
| titleOfInvention |
Integrated sensor structure |
| abstract |
Embodiments of the present invention provide a method for manufacturing an integrated sensor structure. In one step, a semiconductor substrate having integrated readout electronics and a metallization structure is provided, the metallization structure including tungsten and being exposed on a surface of the semiconductor substrate. In another step, a sensor layer is deposited onto the surface of the semiconductor substrate, the semiconductor substrate having the integrated readout electronics and the metallization structure being exposed, when depositing the sensor layer, to a temperature which is above a maximum temperature used when generating the integrated readout electronics such that the sensor layer is connected to the integrated readout electronics via the metallization structure. |
| priorityDate |
2012-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |