| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5228 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2015-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93f2d0ddfc4f252326b074de6ab27311 |
| publicationDate |
2016-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9337142-B2 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
Provided are a semiconductor device including an oscillator and a manufacturing method thereof, in which cost is low and design flexibility is high. The semiconductor device includes a wiring structure region and an oscillator region. The semiconductor device also includes, in the oscillator region, a metal resistive element as the same layer as a conducting film over uppermost metal wiring in the wiring structure region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10672893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019165148-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417753-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879380-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112368832-A |
| priorityDate |
2012-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |