| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2012-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b40a280763d00cf7e3dd03b11a743e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_addbf34b512ba7d20ce6ef028f91e46c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_543d1538a8ce3bf1ed24b0d187bc27b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f96285986a5bd3d6bc7d72875a6d5552
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48c207b888b197699da9e2c5ee049547 |
| publicationDate |
2016-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9337103-B2 |
| titleOfInvention |
Method for removing hard mask oxide and making gate structure of semiconductor devices |
| abstract |
A method includes forming a first gate above a semiconductor substrate, forming a hard mask on the first gate, and forming a contact etch stop layer (CESL) on the hard mask. No hard mask is removed between the step of forming the hard mask and the step of forming the CESL. The method further includes forming an interlayer dielectric (ILD) layer over the CESL, and performing one or more CMP processes to planarize the ILD layer, remove the CESL on the hard mask, and remove at least one portion of the hard mask. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018063376-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158515-B2 |
| priorityDate |
2012-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |