| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2014-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bbce926195aa5fba537c9fee4308fe3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4ac2ef2ed57b5ec5d3a1f71b50098ef |
| publicationDate |
2016-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9330936-B2 |
| titleOfInvention |
Method for depositing metal layers on germanium-containing films using metal chloride precursors |
| abstract |
A method is provided for forming a semiconductor device. According to one embodiment, the method includes providing a substrate having a Ge-containing film thereon, identifying a first plasma processing recipe that uses a metal chloride precursor to deposit a first metal layer on the Ge-containing film at a higher rate than the Ge-containing film is etched by the metal chloride precursor, identifying a second plasma processing recipe that uses the metal chloride precursor to etch the Ge-containing film at a higher rate than a second metal layer is deposited on the Ge-containing film by the metal chloride precursor, performing the first plasma processing recipe to deposit the first metal layer on the Ge-containing film, and performing the second plasma processing recipe to deposit the second metal layer on the first metal layer, and where the second metal layer is deposited at a higher rate than the first metal layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9449843-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10400330-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361277-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11295979-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10074727-B2 |
| priorityDate |
2013-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |