| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd6c9ed2d33e32e7c49c3c2de3e362c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fad6dc77bd0f33d3cae15ddabb359308 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2012-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_867e05bb2d2d9a1a78869562389bc683 |
| publicationDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9324912-B2 |
| titleOfInvention |
Group III nitride semiconductor light-emitting element and method for producing same |
| abstract |
A group III nitride semiconductor light-emitting element having a pn junction hetero structure composed of: an n-type aluminum gallium indium nitride layer; a light-emitting layer disposed contacting the n-type aluminum gallium indium nitride layer and including a gallium indium nitride layer containing crystals having a larger lattice constant than the n-type aluminum gallium indium nitride layer; and a p-type aluminum gallium indium nitride layer provided on the light-emitting layer. Further, the relative atomic concentrations of donor impurities at either interface of the light-emitting layer and within respective layers of the light-emitting element are specified herein. |
| priorityDate |
2011-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |