| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0826 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 |
| filingDate |
2014-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec322bcce9b32354e30aeaf697fd1bec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_609ed0598b7c2eb80232d53e9ad98986
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_786a5bcbed6b9357fb92b9ba9dd9120f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a06b7f2662b027ba9f4ebfab59a0faa0 |
| publicationDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9324828-B2 |
| titleOfInvention |
Vertical P-type, N-type, P-type (PNP) junction integrated circuit (IC) structure, and methods of forming |
| abstract |
Various particular embodiments include a method of amorphizing a portion of silicon underneath the N+ base section of a PNP transistor structure. After amorphizing, the method can include selectively etching that implant-amorphized silicon to trim the collector-base area and collector-base junction. The selective etching is enhanced because the unimplanted silicon region etches at a distinct rate than the implant-amorphized silicon, allowing for control over the trimming of the collector-base junction. |
| priorityDate |
2014-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |