Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddbd9538efce6e134d471b912946264e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2029-0411 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-0679 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-0656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-064 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F11-1068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-04 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-20 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F11-10 |
filingDate |
2013-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e55501a7370d5dbd536a0981db66762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f84026f2772a44a82e9d3efbcdd8b570 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1adfb5e02149d1fb3a15e1ebf488559 |
publicationDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9324450-B2 |
titleOfInvention |
NAND flash memory |
abstract |
Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11182301-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014281826-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361722-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9678831-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I753814-B |
priorityDate |
2013-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |