| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate |
2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_980920b653f9cda7d901f6a42d4b6f00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32f9ce82a765c7482a5b25831777a7c0 |
| publicationDate |
2016-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9318531-B1 |
| titleOfInvention |
SiC—Si3N4 nanolaminates as a semiconductor for MSM snapback selector devices |
| abstract |
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a silicon carbide/silicon nitride nanolaminate stack. The semiconductor layer of the selector element can include a silicon carbon nitride/silicon nitride nanolaminate stack. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017062522-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11309729-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018026621-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11183998-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109716507-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10468458-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023004607-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3618117-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017330915-A1 |
| priorityDate |
2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |