| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4833c6229ed74db3e7ef04eb89e3427b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12120552db2e53bc712eea2c8b27e83e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-9202 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate |
2009-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2e699bdd4350791159a318615980488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7ade9483593692fc3ccc0c32f6edf2d |
| publicationDate |
2016-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9318375-B2 |
| titleOfInvention |
Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep vias |
| abstract |
A method of forming a high aspect ratio via opening through multiple dielectric layers, a high aspect ratio electrically conductive via, methods of forming three-dimension integrated circuits, and three-dimensional integrated circuits. The methods include forming a stack of at least four dielectric layers and etching the first and third dielectric layers with processes selective to the second and fourth dielectric layers, etching the second and third dielectric layers with processes selective to the first and second dielectric layers. Advantageously the process used to etch the third dielectric layer is not substantially selective to the first dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016353038-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812555-B2 |
| priorityDate |
2007-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |