| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-08 |
| filingDate |
2014-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4f04400920727cf56f01b5702ae1a91 |
| publicationDate |
2016-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9315670-B2 |
| titleOfInvention |
Composition for forming resist underlayer film and patterning process |
| abstract |
The invention provides a composition for forming a resist underlayer film including: as a component (A), a silicon-containing compound obtained by hydrolysis and/or condensation of one or more kinds of silicon compounds represented by the following general formula (A-1). There can be provided a composition for forming a resist underlayer film having etching selectivity relative to a conventional organic film and a silicon-containing film and favorable pattern adhesiveness relative to fine pattern even in a complicated patterning process.n nR 1A a1 R 2A a2 R 3A a3 Si(OR 0A ) (4-a1-a2-a3) (A-1) |
| priorityDate |
2013-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |