| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4f876fbfa60bb969d81994bdd5127a3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e8e132eba33ccd3d6c6d15467d7bb970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a8d7260e381176e88d8b527f9f346dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_093296dac59d76f22d1a459fe6581180
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e652e25a49ed294b5abe331e8a407811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a5fe5d0a1590d48e4da43ce8aad6d90a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_289b2b15fa5dd1cc6791eda7ca50ba30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d6ea972fa200ffab630e2501626e86f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bd53b7e41f1e826b779d45b5f84d3e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3665cfea1558246ab45d91f4ab8e1ee4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_827dddfa254f0a4191862c76fc8a3dad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 |
| filingDate |
2012-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ff41f85d4ddf5f94b773458958207c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf9bf5706888aea4076df98c843b657d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1856f35c1f6a6af5afe80e8396f44b62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d8dce4f00682b5a0fec7b2a5023a8cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20ba316c990598fb640417f7adcad040
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dcc9b5c021eb9a8902f017788df9316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a162ea7b8d6a0c97e298ddeede24d67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4561bdb470437632348875e885b3f93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc73eaca1255114ef0e8cd2e6a5936da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d5c08eb296f9f2544d96acb4c72922f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5156209d8748485dcc5c50895ef0772 |
| publicationDate |
2016-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9287434-B2 |
| titleOfInvention |
Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material |
| abstract |
Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film. |
| priorityDate |
2011-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |