| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02153
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2014-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d29f26086ba4589c556af186b1107af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45016b15097b154b7d78976c9716e09b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22691f78e0679dc391e7172ba32d0b66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d99528a6b7430da9a5263d8689f01f0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b15f934a1771bfad1924ac101f2f1ef |
| publicationDate |
2016-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9281212-B1 |
| titleOfInvention |
Dielectric tone inversion materials |
| abstract |
A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276572-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163633-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9552988-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019181005-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10056291-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10056292-B2 |
| priorityDate |
2014-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |