| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9411a2cb156fd4a1816f4821365f32f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c70ca37a16a26171eaaf04ade73c9a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0f34326d58c662741812a58ed892424e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27c1d446c233b9f95ce0ec70a8483eb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59dc4f728fcc560302bc9a4ef18a2aec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c3dce9235f1945452170b405785be22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75e77ab4ab35816082cdbb528cde3486 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-195
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-16 |
| filingDate |
2012-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa42444164141994fb0f9429d5a8ae36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3075cb84079dbc38f1d4e8949e07a0bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b0d311e6c2912b857f29612774070e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ff6984d23aaa2516b0b215894f1370d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d199851bf118ce0d7718d3391a38f33 |
| publicationDate |
2016-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9255346-B2 |
| titleOfInvention |
Silicon wafers by epitaxial deposition |
| abstract |
A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10961621-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10947640-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9982364-B2 |
| priorityDate |
2011-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |