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grantDate 2015-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9214533-B2
titleOfInvention Semiconductor device having transparent electrodes
abstract This semiconductor device ( 100 A) includes: a substrate ( 2 ); a gate electrode ( 3 ) formed on the substrate ( 2 ); a gate insulating layer ( 4 ) formed over the gate electrode ( 3 ); an oxide semiconductor layer ( 5 ) formed on the gate insulating layer ( 4 ); source and drain electrodes ( 6 s, 6 d ) electrically connected to the oxide semiconductor layer ( 5 ); a first transparent electrode ( 7 ) electrically connected to the drain electrode ( 6 d ); an interlayer insulating layer ( 8 ) including a dielectric layer ( 8 a ) formed over the source and drain electrodes ( 6 s, 6 d ); and a second transparent electrode ( 9 ) formed on the interlayer insulating layer ( 8 ). At least a portion of the second transparent electrode ( 9 ) overlaps with the first transparent electrode ( 7 ) with the dielectric layer ( 8 a ) interposed between them, and the oxide semiconductor layer ( 5 ) and the first transparent electrode ( 7 ) are formed out of the same oxide film.
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