| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_339141b31a083658a51af29a540d70ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed0cd44fcc7bef7b6f23ec71fa14442e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d30298d77b491e8721979af25f06a876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d3123adb64ff151513d52b5ce1aa93c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ef73f36baa533ac8533718a5c9609623 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-26 |
| filingDate |
2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_676bb5a532e9b783a9cb084b68112d75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_846b8f52a24a9e08bc9c88c23a1d8671
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3a406340730475279ad168ae176f697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fb9d53b3f2da04b7063ef3ca452f636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e7c720328f23d7e525ef3ec2afa4b8 |
| publicationDate |
2015-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9202978-B2 |
| titleOfInvention |
Radiation-emitting semiconductor chip having integrated ESD protection |
| abstract |
A radiation-emitting semiconductor chip having a semiconductor layer sequence based on a nitride compound semiconductor material and having a pn junction includes a first protective layer having deliberately introduced crystal defects, a second protective layer having a higher doping than the first protective layer, wherein the first protective layer protects the semiconductor chip against electrostatic discharge pulses, an active zone that generates radiation disposed downstream of the first protective layer in a growth direction, wherein during operation of the semiconductor chip, a breakdown behavior of the semiconductor layer sequence in a reverse direction in regions having crystal defects differs from regions without crystal defects, and wherein in the event of electrostatic discharge pulses, electrical charge is dissipated in a homogeneously distributed manner via the regions having crystal defects. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9853018-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475951-B2 |
| priorityDate |
2011-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |