http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9196641-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8609910192bf45e2ff8a36f0105bd70c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate | 2012-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee7a43fa41877d64a699d2e0b100cc6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29eb49d2f32289065386bbe34c1cbc8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bfb3d69d996a61ff3896adf9f6bc948 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4aaa6f9b167ec0f8144a9dac737878bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3241f4222d6607e10e058be74a0de3e |
| publicationDate | 2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9196641-B2 |
| titleOfInvention | Printed dopant layers |
| abstract | A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands. |
| priorityDate | 2006-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 71.