| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb43af104d3a6bf54abc6c74cf800224 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_555b9830e7c1db096a6e5d7f617e34b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a5558eb296743314b7d9e60a8d1640f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d08eb0fa06cd05e9154fe15564b02971
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44fdbc0acb6ad1dfe02001d6f675cd98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdfc8eb010aba20cc4bd86fdf34b1e20 |
| publicationDate |
2015-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9159864-B2 |
| titleOfInvention |
Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices |
| abstract |
Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface defined by a p-type absorber layer of the p-n junction. The conductive paste can include a conductive material, a solvent system, and a binder such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium while copper is deposited onto the Te enriched surface. The acid is then substantially consumed during curing. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10074765-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10115856-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9954136-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972740-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9748434-B1 |
| priorityDate |
2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |