| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2012-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5a29444179f08eb9c56b41077b75946
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17bcb911e7cad2910d0a52fb48a228b1 |
| publicationDate |
2015-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9159581-B2 |
| titleOfInvention |
Method of making a semiconductor device using a bottom antireflective coating (BARC) layer |
| abstract |
This description relates to a method of making a semiconductor device including forming an inter-level dielectric (ILD) layer over a substrate and forming a layer set over the ILD layer. The method further includes etching the layer set to form a tapered opening in the layer set and etching the ILD layer using the layer set as a mask to form an opening in the ILD layer. The opening in the ILD layer has a line width roughness (LWR) of less than 3 nanometers (nm). This description also relates to a semiconductor device including an inter-level dielectric (ILD) layer over a substrate; and a layer set over the ILD layer. The layer set has a tapered opening within the layer set. Etching the layer set comprises forming the tapered opening having sidewalls at an angle with respect to a top surface of the ILD layer ranging from 85-degrees to 90-degrees. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9589798-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10867842-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163976-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9853087-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020135546-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10068991-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017069684-A1 |
| priorityDate |
2012-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |