| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45538 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2013-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a56f8ea62840d6bc8801bb73fefc9032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19a27362ec7e6877c74185b7248e4068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_903893f13bb20805cdf6875ad720d0e9 |
| publicationDate |
2015-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9145607-B2 |
| titleOfInvention |
Tandem source activation for cyclical deposition of films |
| abstract |
A method includes flowing reactant gases into a process chamber. Plasma having a first power level is supplied using a plasma source. The process chamber is dosed with the precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of the substrate and is insufficient to decompose the precursor that is adsorbed. After a first predetermined period, the method includes removing a portion of the precursor that does not adsorb onto the substrate. The precursor that is adsorbed is activated using plasma having a second power level using the plasma source. The second power level is greater than the first power level and is sufficient to decompose the precursor. |
| priorityDate |
2013-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |