patent/US-9142517-B2

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9142517-B2

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filingDate	2012-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2015-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fe68fa32b8cbf20ca7cfb07b500de21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90e392591b3cdfb262b9ccd3749a5bd1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_569b905df2982f96cd056719feaa05df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_389c85714c42b5d8820a1e8cb7fa853f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82f61c624d753557d2fa35b370058c02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d5b343c55e13c93822fe2c012529a67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11c514ff9575aabc2f2150fcb012c6fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bfb1bd31fd1368fcc12755420fcf77c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7aab9527430a1bbafdf8300b255da084
publicationDate	2015-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-9142517-B2
titleOfInvention	Hybrid bonding mechanisms for semiconductor wafers
abstract	The embodiments of diffusion barrier layer described above provide mechanisms for forming a copper diffusion barrier layer to prevent device degradation for hybrid bonding of wafers. The diffusion barrier layer(s) encircles the copper-containing conductive pads used for hybrid bonding. The diffusion barrier layer can be on one of the two bonding wafers or on both bonding wafers.
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Total number of triples: 185.