| abstract |
A method for manufacturing an implant material includes preparing a base material for implant, removing moisture from a chamber in which the base material is placed, and introducing material gas as a carbon source and a silicon source into the chamber after the removal of the moisture to form a carbon thin film containing a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded on a surface of the base material by ionized deposition. |